Etching Equipment - Company Ranking(20 companyies in total)
Last Updated： Aggregation Period:Jul 16, 2025〜Aug 12, 2025
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Display Company Information
| Company Name | Featured Products | ||
|---|---|---|---|
| Product Image, Product Name, Price Range | overview | Application/Performance example | |
| The RIE-10NR is a reactive ion etching device designed for high-precision etching of various silicon thin films such as Si, Poly-Si, SiO2, and Si3N4. This device offers excellent cost performance, as it is low-priced yet capable of managing various etching conditions through the integrated PLC. | - High-precision etching of various silicon thin films such as Si, Poly-Si, SiO₂, and SiN - Fabrication of semiconductor lasers - Defect analysis | ||
| 【Features】 <RIE-400iPC> ■Compatible with maximum Φ4” wafers ■Can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity ■By adopting an exhaust system directly connected to the reaction chamber, a wide process window from low flow/low pressure to high flow/high pressure is realized ■Supports both interference-type and emission spectrometry-type endpoint monitors, enabling endpoint detection at the target film thickness *For more details, please refer to the PDF document or feel free to contact us. | For more details, please refer to the PDF document or feel free to contact us. | ||
| The VPE-4F is a XeF2 etching device primarily intended for etching the sacrificial layer (Si) during the formation of standalone devices in the MEMS process. Being a completely dry process, it can suppress the occurrence of stiction (sticking) that can be problematic in wet processes. Additionally, it is designed to be very compact and tabletop-sized, making it suitable for research and development purposes. | Etching of sacrificial layer (Si) during the formation of autonomous devices in the MEMS process. | ||
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- Featured Products
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Dry etching device RIE-10NR (parallel plate type RIE device)
- overview
- The RIE-10NR is a reactive ion etching device designed for high-precision etching of various silicon thin films such as Si, Poly-Si, SiO2, and Si3N4. This device offers excellent cost performance, as it is low-priced yet capable of managing various etching conditions through the integrated PLC.
- Application/Performance example
- - High-precision etching of various silicon thin films such as Si, Poly-Si, SiO₂, and SiN - Fabrication of semiconductor lasers - Defect analysis
ICP etching equipment RIE-800iPC/RIE-400iPC
- overview
- 【Features】 <RIE-400iPC> ■Compatible with maximum Φ4” wafers ■Can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity ■By adopting an exhaust system directly connected to the reaction chamber, a wide process window from low flow/low pressure to high flow/high pressure is realized ■Supports both interference-type and emission spectrometry-type endpoint monitors, enabling endpoint detection at the target film thickness *For more details, please refer to the PDF document or feel free to contact us.
- Application/Performance example
- For more details, please refer to the PDF document or feel free to contact us.
Dry etching equipment / XeF2 etching equipment
- overview
- The VPE-4F is a XeF2 etching device primarily intended for etching the sacrificial layer (Si) during the formation of standalone devices in the MEMS process. Being a completely dry process, it can suppress the occurrence of stiction (sticking) that can be problematic in wet processes. Additionally, it is designed to be very compact and tabletop-sized, making it suitable for research and development purposes.
- Application/Performance example
- Etching of sacrificial layer (Si) during the formation of autonomous devices in the MEMS process.
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